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| Preliminary Data SIPMOS(R) Power Transistor Features * N channel * SPD 10N10 Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 100 0.2 10 V A Enhancement mode * Avalanche rated * dv/dt rated Type SPD10N10 SPU10N10 Package P-TO252 P-TO251 Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S Q67040-S4119-A2 Tape and Reel Q67040-S4111-A2 Tube Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous drain current Symbol Value 10 6.3 40 59 4 6 20 40 -55... +175 55/150/56 kV/s V W C mJ Unit A ID TC = 25 C TC = 100 C Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 C Avalanche energy, single pulse ID = 10 A, VDD = 25 V, RGS = 25 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS = 10 A, VDS = 0 V, di/dt = 200 A/s Gate source voltage Power dissipation VGS Ptot T j , Tstg TC = 25 C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Data Sheet 1 05.99 SPD 10N10 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area1) Symbol min. Values typ. max. 3.1 100 75 50 K/W Unit RthJC RthJA RthJA - Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. 3 max. 4 A 0.1 10 1 100 100 nA 0.15 0.2 V Unit V(BR)DSS VGS(th) I DSS 100 2.1 VGS = 0 V, ID = 0.25 mA Gate threshold voltage, VGS = VDS ID = 1 mA Zero gate voltage drain current VDS = 100 V, VGS = 0 V, Tj = 25 C VDS = 100 V, VGS = 0 V, Tj = 125 C Gate-source leakage current I GSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 10 V, ID = 6 A 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. Data Sheet 2 05.99 SPD 10N10 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Symbol min. Values typ. 4.3 400 125 70 10 max. 530 180 105 15 ns S pF Unit g fs Ciss Coss Crss t d(on) 3 - VDS2*ID*RDS(on)max , ID = 6 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time VDD = 30 V, V GS = 10 V, ID = 3 A, RG = 50 Rise time tr - 45 70 VDD = 30 V, V GS = 10 V, ID = 3 A, RG = 50 Turn-off delay time t d(off) - 55 75 VDD = 30 V, V GS = 10 V, ID = 3 A, RG = 50 Fall time tf - 40 55 VDD = 30 V, V GS = 10 V, ID = 3 A, RG = 50 Data Sheet 3 05.99 SPD 10N10 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Gate to source charge Symbol min. Values typ. 4.5 29.6 46 6.8 max. 7 45 69 V nC Unit Q gs Q gd Qg V(plateau) - VDD = 80 V, ID = 10 A Gate to drain charge VDD = 80 V, ID = 10 A Gate charge total VDD = 80 V, ID = 10 A, VGS = 0 to 10 V Gate plateau voltage VDD = 80 V, ID = 10 A Reverse Diode Inverse diode continuous forward current IS I SM VSD t rr Q rr - 1.4 170 0.3 10 40 1.6 255 0.45 A TC = 25 C Inverse diode direct current,pulsed TC = 25 C Inverse diode forward voltage V ns C VGS = 0 V, I F = 20 A Reverse recovery time VR = 30 V, IF=IS , diF/dt = 100 A/s Reverse recovery charge VR = 30 V, IF=l S , diF/dt = 100 A/s Data Sheet 4 05.99 SPD 10N10 Power Dissipation Drain current Ptot = f (TC) SPD10N10 ID = f (TC ) parameter: VGS 10 V SPD10N10 45 W 11 A 9 35 8 30 25 20 15 10 2 5 0 0 1 20 40 60 80 100 120 C Ptot ID 7 6 5 4 3 160 0 0 20 40 60 80 100 120 C 160 TC TC Safe operating area Transient thermal impedance I D = f (V DS) parameter : D = 0 , T C = 25 C 10 2 SPD10N10 ZthJC = f (tp ) parameter : D = tp /T 10 1 tp = 43.0s SPD10N10 K/W A 100 s 10 0 ) =V 1 ms Z thJC 10 -1 D = 0.50 ID R DS (on DS /I 10 1 D 10 ms 0 0.20 0.10 10 -2 0.05 0.02 single pulse 0.01 10 DC 10 -1 -1 10 10 0 10 1 10 2 V 10 3 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS tp Data Sheet 5 05.99 SPD 10N10 Typ. output characteristics I D = f (VDS) parameter: tp = 80 s SPD10N10 Typ. drain-source-on-resistance RDS(on) = f (ID) parameter: V GS SPD10N10 24 A Ptot = 40W l k j i VGS [V] a 4.0 b 4.5 0.65 b c d e f g h i 20 18 0.55 0.50 h 16 RDS(on) c d 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 10.0 0.45 0.40 0.35 0.30 0.25 j ID 14 12 10 8 g e f fg h e i j d k l 6 4 2 0 0 2 4 6 8 10 12 14 c b a 0.20 0.15 0.10 0.05 VGS [V] = b 4.5 c 5.0 d 5.5 e f 6.0 6.5 g 7.0 h i 7.5 8.0 j 9.0 k l k l 10.0 20.0 16 18 V 21 VDS 0.00 0 4 8 12 16 A 24 ID Typ. transfer characteristics I D= f (VGS) parameter: tp = 80 s Typ. forward transconductance gfs = f(ID ); Tj = 25C parameter: gfs 7 VDS 2 x I D x RDS(on) max 24 A S 20 18 5 16 14 12 10 8 2 6 4 2 0 0 1 2 3 4 5 6 7 8 V gfs ID 4 3 1 10 0 0 2 4 6 8 10 12 14 16 18 A 22 VGS ID Data Sheet 6 05.99 SPD 10N10 Drain-source on-resistance Gate threshold voltage RDS(on) = f (Tj) parameter : ID = 6 A, VGS = 10 V SPD10N10 VGS(th) = f (Tj) parameter : VGS = V DS, ID = 1 mA 5.0 V 4.4 0.75 0.60 4.0 VGS(th) RDS(on) 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 -60 3.6 3.2 2.8 2.4 typ max 98% typ 2.0 1.6 min 1.2 0.8 0.4 0.0 -60 -20 20 60 100 140 C -20 20 60 100 C 160 200 Tj Tj Typ. capacitances C = f (VDS) parameter: V GS = 0 V, f = 1 MHz 10 4 Forward characteristics of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 s 10 2 SPD10N10 pF A 10 3 10 1 C C iss 10 2 Coss Crss IF 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 1 0 5 10 15 20 25 30 V 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VDS VSD Data Sheet 7 05.99 SPD 10N10 Avalanche Energy EAS = f (Tj) parameter: ID = 10 A, V DD = 25 V Typ. gate charge VGS = f (QGate ) parameter: ID puls = 10 A SPD10N10 RGS = 25 60 mJ 16 V 12 50 45 VGS EAS 40 35 30 25 10 0,2 VDS max 0,8 VDS max 8 6 20 15 10 2 5 0 20 40 60 80 100 120 C 4 160 0 0 10 20 30 40 50 Tj 70 nC Q Gate Drain-source breakdown voltage V(BR)DSS = f (Tj) SPD10N10 120 V 114 V(BR)DSS 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 C 180 Tj Data Sheet 8 05.99 |
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